基准源是DC/DC转换器、AC/DC转换器、充电保护芯片、LED驱动、线性稳压器、PWM调制器等常见的电源管理芯片中不可缺少的模块。它为电源管理芯片中的其他模块提供参考电压，基准源的精度、稳定性等性能将会直接影响到芯片的性能，因此设计高性能的基准源显得尤为重要。低电源电压、低温漂、高电源抑制比、低功耗是目前基准源研究的热点。带隙基准源是各种基准源架构中研究成熟使用广泛的一种基准拓扑结构。鉴于此，本文将对低温漂、高性能的带隙基准进行研究设计。
本文从双极型晶体管入手介绍了带隙基准电压的产生原理，分析了Kuijk、Widlar、Brokaw、Banba等几种传统的带隙基准结构。并研究了带隙电压的高阶温度特性，分析了几种常见的高阶温度补偿策略。在此基础上，设计了一种基于传统Kuijk带隙基准结构的高性能带隙基准。推导分析了电源抑制比与高性能运放之间的关系，设计了一种具有高增益和高电源抑制比的两级运放。给出了一种分段曲率补偿方案，通过利用CTAT电压和PTAT电压的温度特性以及MOS的亚阈值特性，在低温和高温时产生曲率补偿电压对基准电压进行了分段曲率补偿。
使用HSPICE仿真软件对带隙基准电路进行了仿真验证，所采用的工艺模型为UMC 0.25μm BCD。仿真结果表明温度在-40℃～125℃的范围内，补偿前的基准温度系数为13.7ppm/℃，补偿后的温度系数为2.8ppm/℃；低频时的电源抑制比为-91.2dB；线性调整率为24.57μV/V；基准环路的低频开环增益为64.6dB,相位裕度为83°;静态功耗电流为9.2μA。
从仿真结果看出，分段曲率补偿后的基准电压温度系数明显降低。此外，在电源抑制比、线性调整率、功耗等方面，本文所提出的带隙基准电路都具有一定的优势。

In recent years, with the fast iterative development of the smart TV, smartphone, swearable devices, laptops and other consumer electronics, the performance requirements of chip increases gradually. Power managerment chip supply high stability and high efficiency of electricity for other chips in the circuit system. It’s indispensability for the circuit system. Reference source is the indispensable function module of power management chip such as DC/DC converter, AC/DC converter, charging protection chip, LED Circuit, linear voltage regulator, PWM modulator. It provides reference voltage for other function modules in a system. So, the precision, stability and other performance of reference source will directly affect the performance of the chip. So the design of high performance reference source is particularly important. Low supply voltage, low temperature drift, high power supply rejection ratio, low power consumption are the current hot research topics of reference source. Bandgap reference source is the most mature and widely used topological structure of reference source. Therefore, this article will study the low temperature drift and high performance bandgap voltage reference. 
Starting with the bipolar transister, this paper introduces the principle of bandgap voltage reference. And this paper analyzes the Kuijk, Widlar, Brokaw and Banba conventional bandgap reference structure. Then the higher-order temperature characteristic and commonly used higher-order temperature compensation methods are studied. On the basis of the above, this paper proposes and designs a high performance bandgap reference which is based on the traditional Kuijk bandgap reference structure. The relationship between the bandgap reference power supply rejection ratio(PSRR) and the high-performance op-amp is studied. Then a dual-stage amplifier with high gain and high PSRR is designed. A piecewise curvature compensation method is proposed. The temperature characteristic of CTAT and PTAT voltage, and the sub-threshold characteristic of MOS are used to make curvature compensation for bandgap reference voltage at the low and high temperature. 
Based on the UMC 0.25μm BCD process model and HSPICE simulation bench, the bandgap reference circuit is verified by simulation. The simulation result shows that uncompensated temperature coefficient(TC) of reference voltage is 13.7ppm/℃ at -40℃~125℃, and the TC after compensation is 2.8ppm/℃. The PSRR is -91.2dB at low frequency. The line regulation(LNR) is 24.57μV/V. The low frequency loop gain is 64.6dB, and the phase margin is 83 degrees. The quiescent power dissipation current is 9.2μA.
See from the simulation results, the TC obviously decrease after the reference voltage is compensated. In addition, the bandgap reference circuit in this paper has advantage on the performance of PSRR, LNR, power consumption, etc.

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